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| RF Power Field Effect Transistor LDMOS, 865 -- 960 MHz, 30W, 26V 5/14/04 Preliminary MAPLST0810-030CF Features Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: POUT: 30W (P1dB) Gain: 18dB Efficiency: 50% Ruggedness: 10:1 VSWR @ 30W CW, 26V, 925MHz High Gain, High Efficiency and High Linearity Excellent Thermal Stability Package Style P-239 Maximum Ratings Parameter Drain--Source Voltage Gate--Source Voltage Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W C C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.8 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 865-960 MHz, 30W, 26V MAPLST0810-030CF 5/14/04 Preliminary Characteristic DC CHARACTERISTICS @ 25C Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 A) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 300 mA) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25C Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W) Input Return Loss (VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 300 mA, f = 920 & 960 MHz, POUT = 30 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Symbol Min Typ Max Unit V(BR)DSS IDSS IGSS VGS(th) 65 -- -- 2 -- -- -- -- -- 1 3 4 Vdc Adc Adc Vdc VDS(Q) -- 4.0 -- Vdc VDS(on) Gm -- 0.20 -- Vdc -- 2.0 -- S Ciss Coss Crss -- -- -- 50 32 1.4 -- -- -- pF pF pF GP EFF () IRL -- -- -- 18 50 12 -- -- -- dB % dB No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 865-960 MHz, 30W, 26V MAPLST0810-030CF 5/14/04 Preliminary 30 VDD = 26V, f = 960MHz, IDQ = 300mA, 100kHz Tone Spacing 60 25 45 20 Gain 30 15 Efficiency 15 10 15 20 25 30 35 40 45 50 0 POUT (dBm) PEP Graph 1. Power Gain and Drain Efficiency vs. Output Power -20 -30 -40 VDD = 26V, f = 960MHz, IDQ = 300mA, 100kHz Tone Spacing IMD (dBc) 3rd Order -50 -60 -70 -80 -90 15 20 25 30 35 40 45 50 5th Order 7th Order POUT(dBm) PEP Graph 2. Intermodulation Distortion vs. Output Power 3 Efficiency (%) Gain (dB) RF Power LDMOS Transistor, 865-960 MHz, 30W, 26V MAPLST0810-030CF 5/14/04 Preliminary Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 4 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. |
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